Integrated circuitry comprising transistors with b

专利名称：Integrated circuitry comprising transistors

with broken up active regions

发明人：Michael A. Smith申请号：US13897047申请日：20130517公开号：US09041144B2公开日：20150526

专利附图：

摘要：Some embodiments include integrated circuits having first and secondtransistors. The first transistor is wider than the second transistor. The first and secondtransistors have first and second active regions, respectively. Dielectric features are

associated with the first active region and break up the first active region. The secondactive region is not broken up to the same extent as the first active region. Someembodiments include methods of forming transistors. Active areas of first and secondtransistors are formed. The active area of the first transistor is wider than the active areaof the second transistor. Dielectric features are formed in the active area of the firsttransistor. The active area of the first transistor is broken up to a different extent thanthe active area of the second transistor. The active areas of the first and secondtransistors are simultaneously doped.

申请人：Micron Technology, Inc.

地址：Boise ID US

国籍：US

代理机构：Wells St. John, P.S.

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